Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor

Author:

Subhasree D.,Yuvaraj R.

Publisher

AIP Publishing

Reference24 articles.

1. Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

2. A. Challam, C. Chelliah, and D. Nirmal, “Design and fabrication of GaAs based MOSFET by physical vapor deposition method,” Materials, 2018, [Online]. Available: https://www.ingentaconnect.com/contentone/asp/mf/2018/00000007/00000004/art00001

3. J. Cyril Robinson Azariah, U. Satheesh, and D. Devaprakasam, “Study of Electron Transport in Organic and Inorganic Atomic Monolayer Based MOS/MOSFET,” arXiv, p. arXiv:1409.6419, 2014. Accessed: Aug. 09, 2021. [Online]. Available: https://ui.adsabs.harvard.edu/abs/2014arXiv1409.6419C/abstract

4. MOS capacitor for simple thiol based biosensor applications

5. Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

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