RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga<sub>2</sub>O<sub>3</sub> as Dielectric Layer-Reference-Cited by-同舟云学术

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RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga₂O₃ as Dielectric Layer

Published:2023-03-06 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS)
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Author:

Amina Noual¹,Zitouni Messai²,Zineeddine Touati²

Affiliation:

1. LIST Laboratory, University of M’hamed Bougara,Boumerdes,Algeria

2. ETA Laboratory, University Mohamed El Bachir El Ibrahimi of Bordj Bou Arreridj,Algeria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10104518/10104524/10104839.pdf?arnumber=10104839

Reference22 articles.

1. Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics

2. Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates

3. An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

4. Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics

5. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

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