Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-021-04550-5.pdf
Reference39 articles.
1. T. Zine-eddine, H. Zahra, M. Zitouni, Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications. J. Sci. Adv. Mater. Devices 4(1), 180–187 (2019). https://doi.org/10.1016/j.jsamd.2019.01.001 (ISSN 2468-2179)
2. R. Chu et al., 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on—resistance. IEEE Electron. Device Lett. 32(5), 632–634 (2011). https://doi.org/10.1109/LED.2011.2118190
3. E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, G. Tränkle, AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs). IEEE Trans. Electron Devices 57(6), 1208–1216 (2010). https://doi.org/10.1109/TED.2010.2045705
4. A.S. Augustine Fletcher, D. Nirmal, J. Ajayan, L. Arivazhagan, Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications. AEU Int. J. Electron. Commun. 99, 325–330 (2019). https://doi.org/10.1016/j.aeue.2018.12.006 (ISSN 1434-8411)
5. D. Cucak et al., in Physical Modeling and Optimization of a GaN HEMT Design with a Field Plate Structure for High Frequency Application, 2014 IEEE Energy Conversion Congress and Exposition (ECCE) (Pittsburgh, PA, USA, 2014), pp. 2857–2864. https://doi.org/10.1109/ECCE.2014.6953786
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed;International Journal of High Speed Electronics and Systems;2024-02-23
2. Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application;Serbian Journal of Electrical Engineering;2024
3. RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga2O3 as Dielectric Layer;2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS);2023-03-06
4. Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate;Applied Surface Science;2022-06
5. Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics;Electronics;2022-01-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3