Record combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
Funder
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5090528
Reference25 articles.
1. W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology
2. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
3. Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates
4. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
5. Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs
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