Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment
Author:
Funder
ShanghaiTech University
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference31 articles.
1. GaN-based power devices: physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021
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3. Small Vth shift and low dynamic Ron in GaN MOSHEMT with ZrO2 gate dielectric;Zhang;IEEE Trans. Electron. Dev.,2023
4. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT;Acurio;Solid State Electron.,2017
5. Degradation of transient OFF‐state leakage current in AlGaN/GaN HEMTs induced by ON‐state gate overdrive;Li;Phys. Status Solidi C,2014
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