Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment-Reference-Cited by-同舟云学术

Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment

Published:2013-04-22 Issue:8 Volume:210 Page:1612-1617
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kang Yu-Seon¹,Kim Dae-Kyoung¹,Cho Mann-Ho¹,Seo Jung-Hye²,Shon Hyun Kyong³,Lee Tae Geol³,Cho Young Dae⁴,Kim Sun-Wook⁴,Ko Dae-Hong⁴,Kim Hyoungsub⁵

Affiliation:

1. Institute of Physics and Applied Physics; Yonsei University; Seoul 120-749 Korea

2. Division of Materials Science; Korea Basic Science Institute; Daejeon 305-333 Korea

3. Korea Research Institute of Standards and Science; Daejeon 305-540; Korea

4. Department of Material Science and Engineering; Yonsei University; Seoul 120-749 Korea

5. School of Advanced Materials Science and Engineering; Sungkyunkwan University; Suwon 440-746 Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201228628/fullpdf

Reference16 articles.

1. High dielectric constant oxides

2. Band offsets of high K gate oxides on III-V semiconductors

3. Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs

4. Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

5. Electron band alignment between (100)InP and atomic-layer deposited Al2O3

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