Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures-Reference-Cited by-同舟云学术

Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Published:2013-03-20 Issue:7 Volume:210 Page:1381-1385
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

An Chee-Hong¹,Mahata Chandreswar¹,Byun Young-Chul¹,Lee Myung Soo¹,Kang Yu Seon²,Cho Mann-Ho²,Kim Hyoungsub¹

Affiliation:

1. School of Advanced Materials Science and Engineering; Sungkyunkwan University; Suwon 440-746 Republic of Korea

2. Institute of Physics and Applied Physics; Yonsei University; Seoul 120-749 Republic of Korea

Funder

IT R&D program of the MKE

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201228759/fullpdf

Reference18 articles.

1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Surface Defects and Passivation of Ge and III–V Interfaces

4. Thermal Stabilities of ALD-HfO2 Films on HF- and (NH4)2S-Cleaned InP

5. Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

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2. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability;ACS Applied Materials & Interfaces;2016-03-09

3. Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition;The Journal of Physical Chemistry C;2015-03-05

4. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states;Journal of Applied Physics;2014-07-07

5. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP;Journal of Applied Physics;2013-10-21