Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states-Reference-Cited by-同舟云学术

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Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Published:2014-07-07 Issue:1 Volume:116 Page:014504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Galatage R. V.¹,Zhernokletov D. M.²,Dong H.³,Brennan B.³,Hinkle C. L.³,Wallace R. M.²³,Vogel E. M.⁴

Affiliation:

1. Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA

2. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA

3. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, USA

4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4886715

Reference60 articles.

1. Electrical modeling of compound semiconductor interface for FET device assessment

2. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

3. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

4. Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

5. Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics

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