Modified high temperature vapor phase epitaxy for growth of GaN films-Reference-Cited by-同舟云学术

Modified high temperature vapor phase epitaxy for growth of GaN films

Published:2017-01-17 Issue:9 Volume:214 Page:1600753
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lukin G.¹,Schneider T.¹,Barchuk M.²,Zimmermann F.³,Niederschlag E.¹,Pätzold O.¹,Stelter M.¹

Affiliation:

1. Institute of Nonferrous Metallurgy and Purest Materials; TU Bergakademie Freiberg; Leipziger Str. 32 09599 Freiberg Germany

2. Institute of Material Science; TU Bergakademie Freiberg; Gustav-Zeuner-Str. 5 09599 Freiberg Germany

3. Institute of Applied Physics; TU Bergakademie Freiberg; Leipziger Str. 23 09599 Freiberg Germany

Funder

Deutsche Forschungsgemeinschaft

European Union

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique

2. Properties of GaN grown at high rates on sapphire and on 6H–SiC

3. Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

4. High rate GaN epitaxial growth by sublimation sandwich method

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