Ammonothermal and HVPE Bulk Growth of GaN
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch18
Reference78 articles.
1. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2. The challenge of decomposition and melting of gallium nitride under high pressure and high temperature
3. Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?
4. Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
5. Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds
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1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25
2. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27
3. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices;Crystals;2023-06-23
4. On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals;Crystals;2022-04-15
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