High rate GaN epitaxial growth by sublimation sandwich method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Hole Compensation Mechanism of P-Type GaN Films
3. Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates
4. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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2. Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method;Semiconductors;2018-08-22
3. Modified high temperature vapor phase epitaxy for growth of GaN films;physica status solidi (a);2017-01-17
4. Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3;Technical Physics Letters;2015-09
5. Anomalous small-angle scattering as a way to solve the Babinet principle problem;Crystallography Reports;2013-12
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