High rate GaN epitaxial growth by sublimation sandwich method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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3. Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates
4. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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1. Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates;Journal of the Korean Physical Society;2024-09-04
2. Growth of AlN and GaN crystals by sublimation;Single Crystals of Electronic Materials;2019
3. Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method;Semiconductors;2018-08-22
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5. Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3;Technical Physics Letters;2015-09
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