Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Hole Compensation Mechanism of P-Type GaN Films
3. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
4. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
5. Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
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