In Situ Characterization and Modification of β-Ga2 O3 Flakes Using an Ion Micro-Probe-Reference-Cited by-同舟云学术

In Situ Characterization and Modification of β-Ga2 O3 Flakes Using an Ion Micro-Probe

Published:2018-06-27 Issue:19 Volume:215 Page:1800190
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Peres Marco¹,Alves Luis C.²,Rocha Flávia³,Catarino Norberto³,Cruz Carlos³,Alves Eduardo³,Silva Ana G.⁴,Víllora Encarna G.⁵,Shimamura Kiyoshi⁵,Lorenz Katharina¹

Affiliation:

1. IPFN, INESC-MN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear; Estrada Nacional 10 P-2695-066 Bobadela LRS Portugal

2. C2TN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear; Estrada Nacional 10 P-2695-066 Bobadela LRS Portugal

3. IPFN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear; Estrada Nacional 10 P-2695-066 Bobadela LRS Portugal

4. CEFITEC, Departamento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus de Caparica; P-2829-516 Caparica Portugal

5. National Institute for Materials Science; 1-1 Namiki Tsukuba 305-0044 Japan

Funder

FCT, Portugal

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800190/fullpdf

Reference43 articles.

1. Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

2. Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires

3. Cathodoluminescence of rare earth implanted Ga2O3and GeO2nanostructures

4. Doping of Ga2O3bulk crystals and NWs by ion implantation

5. High-level damage saturation below amorphisation in ion implanted β-Ga2O3

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