Enhancing the luminescence yield of Cr3+ in β-Ga2O3 by proton irradiation-Reference-Cited by-同舟云学术

Enhancing the luminescence yield of Cr³⁺ in β-Ga₂O₃ by proton irradiation

Published:2022-06-27 Issue:26 Volume:120 Page:261904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peres M.¹²³^ORCID,M. Esteves D.³^ORCID,Teixeira B. M. S.⁴^ORCID,Zanoni J.⁴^ORCID,Alves L. C.¹⁵^ORCID,Alves E.¹²^ORCID,Santos L. F.¹⁶^ORCID,Biquard X.⁷^ORCID,Jia Z.⁸^ORCID,Mu W.⁸,Rodrigues J.⁴^ORCID,Sobolev N. A.⁴^ORCID,Correia M. R.⁴^ORCID,Monteiro T.⁴^ORCID,Ben Sedrine N.⁴^ORCID,Lorenz K.¹²³^ORCID

Affiliation:

1. DECN, Instituto Superior Técnico, University of Lisbon, Bobadela 2695-066, Portugal

2. IPFN, Instituto Superior Técnico, University of Lisbon, Lisbon 1049-001, Portugal

3. INESC MN, Lisbon 1000-029, Portugal

4. I3N and Physics Department, University of Aveiro, Aveiro 3810-193, Portugal

5. C2TN, Instituto Superior Técnico, University of Lisbon, Bobadela 2695-066, Portugal

6. CQE, Institute of Molecular Sciences and Department of Chemical Engineering, Instituto Superior Técnico, University of Lisbon, Lisbon 1049-001, Portugal

7. Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France

8. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Abstract

In situ ion-beam-induced luminescence measurements reveal a strong enhancement of the Cr3+ emission yield in electrically conductive chromium doped β-Ga2O3 single crystals upon proton irradiation. The observed effect can be explained based on the Fermi-level pinning caused by radiation defects. This pinning of the Fermi level activates deep carrier traps that can act as sensitizers of the Cr3+ emission. In agreement with this model, in semi-insulating samples, where the Fermi level lies deep in the bandgap, the Cr3+ emission is present already in as-grown samples, and no enhancement of its intensity is observed upon proton irradiation. The boost of the Cr3+ emission yield by irradiation, observed in conductive samples, is reversed by thermal annealing in argon at temperatures above 550 °C for 30 s. The results reveal a high potential of Cr-doped β-Ga2O3 for in situ and ex situ optical radiation detection and dosimetry.

Funder

Portuguese Foundation for Science and Technology

Portuguese Foundation for Science and Tchenology

EU H2020

European Synchrotron Radiation Facility

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0089541

Reference47 articles.