High-level damage saturation below amorphisation in ion implanted β-Ga2O3
Author:
Funder
TAMURA CORPORATION
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
2. Achieving fast oxygen response in individual β-Ga2O3 nanowires by ultraviolet illumination
3. Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments
4. Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K
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