Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=8/a=086502/pdf
Reference20 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
4. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal
5. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
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