Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures-Reference-Cited by-同舟云学术

Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

Published:2020-01-03 Issue:7 Volume:217 Page:1900732
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Schmult Stefan¹^ORCID,Wirth Steffen²,Solovyev Victor V.³,Hentschel Rico⁴,Wachowiak Andre⁴,Scheinert Tobias¹,Großer Andreas⁴,Kukushkin Igor V.³⁵,Mikolajick Thomas¹⁴

Affiliation:

1. Electrical and Computer EngineeringInstitute of Semiconductors and MicrosystemsTU Dresden Nöthnitzer Str. 64 a 01187 Dresden Germany

2. Max-Planck-Institute for Chemical Physics of Solids Nöthnitzer Str. 40 01187 Dresden Germany

3. Institute of Solid State Physics RAS 142432 Chernogolovka Moscow District Russia

4. Namlab gGmbH Nöthnitzer Str. 64 a 01187 Dresden Germany

5. National Research University Higher School of Economics 101000 Moscow Russia

Funder

Deutsche Forschungsgemeinschaft

Russian Science Foundation

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900732

Reference16 articles.

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2. Blue-Violet Laser Diodes Suitable for Blu-ray Disk

3. Electron mobility in modulation-doped AlGaN–GaN heterostructures

4. GaN-on-Si Power Technology: Devices and Applications

5. The 2018 GaN power electronics roadmap

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