Light-tunable 2D subband population in a GaN/AlGaN heterostructure-Reference-Cited by-同舟云学术

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Light-tunable 2D subband population in a GaN/AlGaN heterostructure

Published:2021-01-04 Issue:1 Volume:118 Page:013101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Solovyev V. V.¹^ORCID,Schmult S.²^ORCID,Krückeberg L.³^ORCID,Großer A.³,Mikolajick T.²³^ORCID,Kukushkin I. V.¹

Affiliation:

1. Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia

2. TU Dresden, Electrical and Computer Engineering, Institute of Semiconductors and Microsystems, Nöthnitzer Str. 64, 01187 Dresden, Germany

3. NaMLab gGmbH, Nöthnitzer Str. 64 a, 01187 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Russian Foundation for Fundamental Investigations

Bundesministerium für Wirtschaft und Technologie

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027010

Reference23 articles.

1. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

2. High-Frequency GaN Electronic Devices

3. Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

4. Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-Orbit Interaction in GaN / Alx Ga1−x N Heterojunctions Probed by Electron Spin Resonance;Physical Review Applied;2022-08-12

2. Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs;Journal of Crystal Growth;2022-07

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