Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction-Reference-Cited by-同舟云学术

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Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

Published:2018-07-30 Issue:5 Volume:113 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shchepetilnikov A. V.¹,Frolov D. D.¹,Solovyev V. V.¹,Nefyodov Yu. A.¹,Großer A.²,Mikolajick T.²³^ORCID,Schmult S.³,Kukushkin I. V.¹⁴

Affiliation:

1. Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow District, Russia

2. NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany

3. TU Dresden, Electrical and Computer Engineering, Institute of Semiconductors and Microsystems, Nöthnitzer Str. 64, 01187 Dresden, Germany

4. National Research University Higher School of Economics, 101000 Moscow, Russia

Funder

Basic Research Program of HSE

Russian Foundation for Basic Research

Bundesministerium für Wirtschaft und Technologie

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041363

Reference38 articles.

1. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

2. Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes

3. Nobel Lecture: Fascinated journeys into blue light

4. Invisible circuits

5. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

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