Wavelength-dependent conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN heterostructures-Reference-Cited by-同舟云学术

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Wavelength-dependent conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN heterostructures

Published:2022-09 Issue: Volume:594 Page:126788
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Hui-Tzu,Solovyev Victor V.,Kukushkin Igor V.,Großer Andreas,Mikolajick Thomas,Schmult Stefan

Funder

Deutsche Forschungsgemeinschaft

Russian Foundation for Basic Research

Technische Universität Dresden

Bundesministerium für Wirtschaft und Energie

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. The 2018 GaN power electronics roadmap

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. Electron mobility in modulation-doped AlGaN–GaN heterostructures

4. Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy

5. Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

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