Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE-Reference-Cited by-同舟云学术

Investigation of Photoluminescence, Stimulated Emission, Photoreflectance, and 2DEG Properties of Double Heterojunction AlGaN/GaN/AlGaN HEMT Heterostructures Grown by Ammonia MBE

Published:2018-03-12 Issue:9 Volume:215 Page:1700602
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lutsenko Evgenii V.¹^ORCID,Rzheutski Mikalai V.¹,Vainilovich Aliaksei G.¹,Svitsiankou Illia E.¹,Tarasuk Nikolai P.¹,Yablonskii Gennadii P.¹,Alyamani Ahmed²,Petrov Stanislav I.³,Mamaev Viktor V.³,Alexeev Alexey N.³

Affiliation:

1. Stepanov Institute of Physics, National Academy of Sciences of Belarus; Nezalezhnasti Ave. 68 Minsk 220072 Belarus

2. National Nanotechnology Centre, King Abdulaziz City for Science and Technology; PO Box No. 6086 11442 Riyadh Saudi Arabia

3. SemiTEq JSC; Engels Ave. 27 Saint-Petersburg 194156 Russia

Funder

President of Republic of Belarus

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

2. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

3. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

4. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

5. Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

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3. AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy;Japanese Journal of Applied Physics;2019-04-29

4. MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3;Semiconductors;2018-12