In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy-Reference-Cited by-同舟云学术

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

Published:2015-06 Issue:6 Volume:5 Page:067108
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chaumeton Florian¹^ORCID,Gauthier Sébastien¹,Martrou David¹

Affiliation:

1. CNRS / CEMES / GNS, 29 rue Jeanne Marvig, 30155 Toulouse, France

Funder

European Commission (EC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922193.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922193&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference18 articles.

1. Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

2. J. C. Moreno, Thèse Ph.D. thesis, UNIVERSITE de Nice-Sophia Antipolis, 2009.

3. Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE

4. Impact of surface step heights of 6H–SiC (0001) vicinal substrates in heteroepitaxial growth of 2H–AlN

5. Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy

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