Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2. Substrates for gallium nitride epitaxy
3. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
4. Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates
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1. Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor;Physics of the Solid State;2024-06
2. Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition;Crystal Growth & Design;2023-03-14
3. Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy;Journal of Alloys and Compounds;2020-10
4. Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate;Philosophical Magazine;2019-04-08
5. Morphology and Work Function of In, Ag, Mg, and Au Nano-Islands Grown on AlN(0001) Surface;physica status solidi (b);2017-12-22
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