Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3118593
Reference16 articles.
1. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
2. AlGaN/GaN HEMTs on (111) silicon substrates
3. GaN-based optoelectronics on silicon substrates
4. AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity
5. GaN growth on 150-mm-diameter (111) Si substrates
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