AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy-Reference-Cited by-同舟云学术

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Published:2019-04-29 Issue:SC Volume:58 Page:SC1010
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Alyamani Ahmed,Lutsenko Evgenii V.,Rzheutski Mikalai V.,Zubialevich Vitaly Z.,Vainilovich Aliaksei G.,Svitsiankou Illia E.,Shulenkova Varvara A.,Yablonskii Gennadii P.,Petrov Stanislav I.,Alexeev Alexey N.

Funder

King Abdulaziz City for Science and Technology

National Academy of Sciences of Belarus

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab06b4/pdf

Reference36 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution

3. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

4. Gallium nitride devices for power electronic applications

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1. Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (a);2020-03-18

2. AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES;Doklady BGUIR;2019-12-07

3. Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy;Quantum Electronics;2019-06-01

4. High temperature ammonia MBE—Real way to improve crystal quality of nitride heterostructures;Journal of Crystal Growth;2019-05