Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Author:

Rzheutski Mikalai V.1ORCID,Lutsenko Evgenii V.1,Vainilovich Aliaksei G.1,Svitsiankou Illia E.1,Nahorny Aliaksei V.1,Yablonskii Gennadii P.1,Zubialevich Vitaly Z.2,Petrov Stanislav I.3,Alexeev Alexey N.3,Nechaev Dmitrii V.4,Jmerik Valentin N.4

Affiliation:

1. Center of Semiconductor Technologies and LasersInstitute of Physics of NAS of Belarus 68 Nezalezhnasci Avenue Minsk 220072 Belarus

2. Tyndall National InstituteUniversity College Cork Lee Maltings, Dyke Parade Cork T12R5CP Ireland

3. SemiTEq JSC 27 Engels Ave Saint-Petersburg 194156 Russia

4. Centre of Nanoheterostructure PhysicsIoffe Institute 26 Polytekhnicheskaya Saint-Petersburg 194021 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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