Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Published:2020-03-18 Issue:14 Volume:217 Page:1900927
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rzheutski Mikalai V.¹^ORCID,Lutsenko Evgenii V.¹,Vainilovich Aliaksei G.¹,Svitsiankou Illia E.¹,Nahorny Aliaksei V.¹,Yablonskii Gennadii P.¹,Zubialevich Vitaly Z.²,Petrov Stanislav I.³,Alexeev Alexey N.³,Nechaev Dmitrii V.⁴,Jmerik Valentin N.⁴

Affiliation:

1. Center of Semiconductor Technologies and LasersInstitute of Physics of NAS of Belarus 68 Nezalezhnasci Avenue Minsk 220072 Belarus

2. Tyndall National InstituteUniversity College Cork Lee Maltings, Dyke Parade Cork T12R5CP Ireland

3. SemiTEq JSC 27 Engels Ave Saint-Petersburg 194156 Russia

4. Centre of Nanoheterostructure PhysicsIoffe Institute 26 Polytekhnicheskaya Saint-Petersburg 194021 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900927

Reference23 articles.

1. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. Metalorganic chemical vapor deposition of group III nitrides—a discussion of critical issues

4. Doping of III-nitride materials

5. Unique optical properties of AlGaN alloys and related ultraviolet emitters

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