Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures
2. Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. An insulator-lined silicon substrate-via technology with high aspect ratio
5. Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors
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1. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor;CrystEngComm;2023
2. Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Chemistry and Physics;2021-02
3. 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination;IEEE Electron Device Letters;2020-08
4. AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy;Japanese Journal of Applied Physics;2019-04-29
5. Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride;The Journal of Physical Chemistry C;2019-02-28
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