Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching-Reference-Cited by-同舟云学术

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

Published:2018-03-25 Issue:8 Volume:215 Page:1700456
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Riedmüller Sandra¹²,Steinmann Claudia¹,Grünenpütt Jan¹,Scholz Ferdinand²,Blanck Hervé¹

Affiliation:

1. United Monolithic Semiconductors GmbH (UMS); Wilhelm-Runge-Str. 11 89081 Ulm Germany

2. Universität Ulm, Institute of Optoelectronics; Albert-Einstein-Allee 45 89081 Ulm Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Quaternary nitride heterostructure field effect transistors

2. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

3. Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures

4. Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

5. InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE;Applied Physics Letters;2024-07-01

2. Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors;physica status solidi (a);2023-01-04

3. Optimized ohmic contacts for InAlGaN/GaN HEMTs;2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM);2022-10-23

4. Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs;IEEE Transactions on Electron Devices;2022-06