Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties-Reference-Cited by-同舟云学术

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Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

Published:2009-01-26 Issue:S2 Volume:6 Page:S1041-S1044
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Behmenburg H.,Khoshroo L. Rahimzadeh,Eickelkamp M.,Mauder C.,Fieger M.,Ketteniss N.,Woitok J.,Wamwangi D.,Wuttig M.,Hernandez S. Estevez,Schäpers T.,Heuken M.,Vescan A.,Kalisch H.,Jansen R. H.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of substrate and growth parameters on the InAlN barrier layer in InAlN/AlN/GaN HEMT structure grown by MOVPE;INTELLIGENT BIOTECHNOLOGIES OF NATURAL AND SYNTHETIC BIOLOGICALLY ACTIVE SUBSTANCES: XIV Narochanskie Readings;2023

2. Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT;IEEE Transactions on Electron Devices;2022-11

3. The Sensing Mechanism of InAlN/GaN HEMT;Crystals;2022-03-16

4. Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching;physica status solidi (a);2018-03-25

5. Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment;Materials Science in Semiconductor Processing;2018-02

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