Optimized ohmic contacts for InAlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Optimized ohmic contacts for InAlGaN/GaN HEMTs

Published:2022-10-23 Issue: Volume: Page:
ISSN:
Container-title:2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
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Author:

Ruterana Pierre¹,Chauvat Marie-Pierre¹,Morales Magali¹,Medjdoub Farid²,Gamarra Piero³,Dua Christian⁴,Delage Sylvain⁴

Affiliation:

1. Université de Caen,CIMAP, 6 boulevard du Marechal Juin,Caen,France

2. Institute of Electronics, Microelectronics and Nanotechnology (IEMN),France

3. Campus Polytechnique,On leave of III-V Lab,Palaiseau,France

4. Campus Polytechnique,III - V Lab,Palaiseau,France

Funder

ANR

LABEX GANEX (project QUAHNIMET)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9966729/9966739/09966781.pdf?arnumber=9966781

Reference19 articles.

1. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

2. Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

3. Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

4. Observation of two atomic configurations for the 1–210 stacking fault in wurtzite (Ga, Al) nitrides;vermaut;Appl Phys Lett,1999

5. HREM study of stacking faults in GaN layers grown on sapphire substrate;potin;J Phys Condensed Matter,2000

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