Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122990
Reference19 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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4. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy
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