Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. S.S. Cohen, G. Gildenblat, Metal-Semiconductor Contacts and Devices, VLSI Electronics, Vol. 13, Academic Press, London 1986, ISBN 0-12-234113-9.
2. Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal
3. High performance AlGaN/GaN HEMT with improved Ohmic contacts
4. 0.12-μm gate III-V nitride HFET's with high contact resistances
5. Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
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