Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures-Reference-Cited by-同舟云学术

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Published:2019-11-11 Issue:7 Volume:217 Page:1900687
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kabouche Riad¹^ORCID,Abid Idriss¹,Püsche Roland²,Derluyn Joff²,Degroote Stefan²,Germain Marianne²,Tajalli Alaleh³,Meneghini Matteo³,Meneghesso Gaudenzio³,Medjdoub Farid¹

Affiliation:

1. Institute of Electronics, Microelectronics and Nanotechnology (IEMN)CNRS Av. Poincaré 59650 Villeneuve d'Ascq France

2. EpiGaN Kempische Steenweg 293 3500 Hasselt Belgium

3. Department of Information EngineeringUniversity of Padova via Gradenigo 6/B 35131 Padova Italy

Funder

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900687

Reference25 articles.

1. Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement

2. J. W.Chung K.Ryu B.Lu T.Palacios inProc. of the European Solid-State Device Research Conf.(ESSDERC) Sevilla Spain2010 pp.52–56.

3. Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

4. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

5. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

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