Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement-Reference-Cited by-同舟云学术

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Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement

Published:2013-06-21 Issue:7 Volume:28 Page:074018
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lin Yu-Syuan,Lian Yi-Wei,Yang Jui-Ming,Lu Hou-Cheng,Huang Yen-Chieh,Cheng Chih-Hsuan,Hsu Shawn S H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074018/pdf

Reference21 articles.

1. Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

2. Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

3. Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes;IEEE Transactions on Electron Devices;2021-06

2. Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures;physica status solidi (a);2019-11-11

3. Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage;Materials Science in Semiconductor Processing;2019-02

4. A Miniature 300-MHz Resonant DC–DC Converter With GaN and CMOS Integrated in IPD Technology;IEEE Transactions on Power Electronics;2018-11

5. Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes;Materials Science in Semiconductor Processing;2017-08

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