Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes

Published:2017-08 Issue: Volume:66 Page:69-73
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hsueh Kuang-Po,Cheng Yuan-Hsiang,Wang Hou-Yu,Peng Li-Yi,Wang Hsiang-Chun,Chiu Hsien-Chin,Hu Chih-Wei,Xuan Rong

Funder

MOST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

2. Recent progress of GaN power devices for automotive applications

3. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

4. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

5. GaN on Si Technologies for Power Switching Devices

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties;Materials Science and Engineering: B;2024-06

2. Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes;Applied Physics Express;2022-01-01

3. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07

4. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures;Materials Science in Semiconductor Processing;2021-02

5. Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices;RSC Advances;2020

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3