Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Published:2019-02 Issue: Volume:90 Page:107-111
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hsueh Kuang-Po,Chang Yi-Sheng,Li Bo-Hong,Wang Hsiang-Chun,Chiu Hsien-Chin,Hu Chih-Wei,Xuan Rong

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. A Compact 60W X-Band GaN HEMT Power Amplifier MMIC

2. Recent progress of GaN power devices for automotive applications

3. Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

4. GaN: Processing, defects, and devices

5. GaN on Si Technologies for Power Switching Devices

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06

2. Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications;IEEE Transactions on Electron Devices;2024-06

3. A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers;physica status solidi (a);2024-01-16

4. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04

5. A new lateral AlGaN/GaN Schottky barrier diode combining with floating metal rings and P-guard rings for high breakdown voltage;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3