A Compact 60W X-Band GaN HEMT Power Amplifier MMIC-Reference-Cited by-同舟云学术

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A Compact 60W X-Band GaN HEMT Power Amplifier MMIC

Published:2017-01 Issue:1 Volume:27 Page:73-75
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Tao Hong-Qi,Hong Wei,Zhang Bin,Yu Xu-Ming

Funder

Chinese NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7809128/07792583.pdf?arnumber=7792583

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25- μm GaN HEMT Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-08

2. An Over 29.5-W, 7–13-GHz Wideband GaN Power Amplifier With High Harmonic Suppression;IEEE Microwave and Wireless Technology Letters;2024-08

3. High Efficiency 70W C-Band GaN MMIC PA for Space-Borne RADAR Applications;2024 IEEE Space, Aerospace and Defence Conference (SPACE);2024-07-22

4. 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs;IEEE Electron Device Letters;2024-07

5. 31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN_x Passivation;IEEE Electron Device Letters;2024-03

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