Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation-Reference-Cited by-同舟云学术

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

Published:2015-10-21 Issue:11 Volume:212 Page:2365-2384
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Teraji Tokuyuki¹,Yamamoto Takashi¹²³,Watanabe Kenji¹,Koide Yasuo¹,Isoya Junichi⁴,Onoda Shinobu²,Ohshima Takeshi²,Rogers Lachlan J.³,Jelezko Fedor³,Neumann Philipp⁵,Wrachtrup Jörg⁵,Koizumi Satoshi¹

Affiliation:

1. National Institute for Materials Science; 1-1 Namiki, Tsukuba Ibaraki 305-0044 Japan

2. Japan Atomic Energy Agency; 1233 Watanuki, Takasaki Gunma 370-1292 Japan

3. Ulm University; Albert-Einstein-Allee 11 89081 Ulm Germany

4. University of Tsukuba; Tsukuba Ibaraki 305-8550 Japan

5. University of Stuttgart; Pfaffenwaldring 57 70569 Stuttgart Germany

Funder

Croucher Foundation

Izumi Science and Technology Foundation

Cross Ministerial Strategic Innovation Promotion Program (SIP)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference66 articles.

1. Growth of diamond particles from methane-hydrogen gas

2. Diamond synthesis from gas phase in microwave plasma

3. Electrical characterization of diamond PiN diodes for high voltage applications

4. Zr/oxidized diamond interface for high power Schottky diodes

5. 1 Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C

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