Electrical characterization of diamond PiN diodes for high voltage applications-Reference-Cited by-同舟云学术

Electrical characterization of diamond PiN diodes for high voltage applications

Published:2013-07-25 Issue:10 Volume:210 Page:2035-2039
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Suzuki Mariko¹²³,Sakai Tadashi¹,Makino Toshiharu²³,Kato Hiromitsu²³,Takeuchi Daisuke²³,Ogura Masahiko²³,Okushi Hideyo²³,Yamasaki Satoshi²³

Affiliation:

1. Corporate Research and Development Center; Toshiba Corporation; 1 Komukai-Toshiba-cho Saiwai-ku Kawasaki, Kanagawa 212-8582 Japan

2. Energy Technology Research Institute; National Institute of Advanced Industrial Science and Technology (AIST); 1-1-1 Umezono Tsukuba, Ibaraki 305-8568 Japan

3. Core Research for Evolutional Science and Technology (CREST); Japan Science and Technology Agency (JST); c/o AIST Tsukuba, Ibaraki 305-8568 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201300051/fullpdf

Reference16 articles.

1. Exceptionally high voltage Schottky diamond diodes and low boron doping

2. High-voltage single-crystal diamond diodes

3. Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode

4. Extreme dielectric strength in boron doped homoepitaxial diamond

5. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

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