Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films-Reference-Cited by-同舟云学术

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Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films

Published:2024-05 Issue: Volume:145 Page:111116
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Matsushima Yuki,Mura Mikiya,Matsumoto Tsubasa,Ichikawa Kimiyoshi,Hayashi Kan,Yamasaki Satoshi,Inokuma Takao,Yoshikawa Taro,Makino Toshiharu,Tokuda Norio

Funder

Kanazawa University

Japan Society for the Promotion of Science

NEDO

JST

Publisher

Elsevier BV

Reference29 articles.

1. The measurement of thermal properties of diamond;Yamamoto;Diamond Relat. Mater.,1997

2. High temperature application of diamond power device;Umezawa;Diamond Relat. Mater.,2012

3. Electrical characterization of diamond PiN diodes for high voltage applications;Suzuki;Phys. Status Solidi A,2013

4. Radiation hardness of diamond and silicon sensors compared;De Boer;Phys. Status Solidi Appl. Mater. Sci.,2007

5. Single crystal diamond wafers for high power electronics;Shikata;Diamond Relat. Mater.,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Ti/B doped diamond functional coated electrodes and electrochemical oxidation applications;Materials Science and Engineering: B;2024-10

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