High temperature application of diamond power device-Reference-Cited by-同舟云学术

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High temperature application of diamond power device

Published:2012-04 Issue: Volume:24 Page:201-205
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Umezawa Hitoshi,Nagase Masanori,Kato Yukako,Shikata Shin-ichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Power semiconductor device figure of merit for high-frequency applications

2. New Unipolar Switching Power Device Figures of Merit

3. Exceptionally high voltage Schottky diamond diodes and low boron doping

4. Extreme dielectric strength in boron doped homoepitaxial diamond

5. High-voltage single-crystal diamond diodes

Cited by 142 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure;Diamond and Related Materials;2024-10

2. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

3. The near surface damage and recovery of low nitrogen diamond implanted with MeV phosphorus ions;Applied Surface Science;2024-07

4. Carbon nanoparticles prepared by the precipitation of soluble carbon materials;Journal of Nanoparticle Research;2024-07

5. Crystal Structure Modification and Dielectric Properties of Sr- and La-Containing A₂B₂O₇ Thin Films for High-Temperature Operational Film Capacitors;ACS Omega;2024-06-07

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