Crystal Structure Modification and Dielectric Properties of Sr- and La-Containing A2B2O7 Thin Films for High-Temperature Operational Film Capacitors-Reference-Cited by-同舟云学术

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Crystal Structure Modification and Dielectric Properties of Sr- and La-Containing A₂B₂O₇ Thin Films for High-Temperature Operational Film Capacitors

Published:2024-06-07 Issue:24 Volume:9 Page:25968-25975
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Nagata Takahiro¹^ORCID,Chikyow Toyohiro²,Ando Akira³

Affiliation:

1. Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan

2. Center for Basic Research on Materials, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan

3. Murata Manufacturing Co., Ltd., 1-10-1 Higashikotari, Nagaokakyo-shi, Kyoto 617-8555, Japan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.4c00788

Reference35 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Current SiC technology for power electronic devices beyond Si

3. Recent progress of GaN power devices for automotive applications

4. High temperature application of diamond power device

5. Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

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