Zr/oxidized diamond interface for high power Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864060
Reference28 articles.
1. Diamond bipolar junction transistor device with phosphorus-doped diamond base layer
2. Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates
3. Diamond Schottky-pn diode with high forward current density and fast switching operation
4. High-voltage single-crystal diamond diodes
5. Exceptionally high voltage Schottky diamond diodes and low boron doping
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