Diamond Homoepitaxial Growth Technology toward Wafer Fabrication, Atomically Controlled Surfaces, and Low Resistivity-Reference-Cited by-同舟云学术

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Diamond Homoepitaxial Growth Technology toward Wafer Fabrication, Atomically Controlled Surfaces, and Low Resistivity

Published:2024-08-13 Issue: Volume: Page:
ISSN:2643-6728
Container-title:Accounts of Materials Research
language:en
Short-container-title:Acc. Mater. Res.

Author:

Ichikawa Kimiyoshi¹^ORCID,Matsumoto Tsubasa¹²^ORCID,Inokuma Takao²,Yamasaki Satoshi¹,Nebel Christoph E.¹³,Tokuda Norio¹²

Affiliation:

1. Nanomaterials Research Institute, Kanazawa University, Kanazawa, Ishikawa 9201162, Japan

2. Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 9201162, Japan

3. Diamond and carbon applications, Freiburg 79102, Germany

Funder

Adaptable and Seamless Technology Transfer Program through Target-Driven R and D

Kanazawa University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/accountsmr.4c00123

Reference52 articles.

1. Madelung, O. Semiconductors: Group IV Elements and III-V Compounds; Madelung, O., Ed. Springer: Berlin, Heidelberg, 1991; pp 6–11.

2. High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamondp-i-nJunction

3. Diamond and biology

4. Materials challenges for quantum technologies based on color centers in diamond

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