Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate-Reference-Cited by-同舟云学术

Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

Published:2013-06-14 Issue:9 Volume:210 Page:1719-1725
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kato Masashi¹,Yoshida Atsushi¹,Ichimura Masaya¹,Nagasawa Hiroyuki²

Affiliation:

1. Department of Engineering Physics, Electronics and Mechanics; Nagoya Institute of Technology; Gokiso, Showa Nagoya 466-8555 Japan

2. Faculty of Science and Technology; Keio University; 3-14-1, Hiyoshi, Kohoku-ku Yokohama 223-8522 Japan

Funder

JSPS KAKENHI

Research Foundation for the Electrotechnology of Chubu

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329015/fullpdf

Reference30 articles.

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

2. The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

3. High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

5. Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method;Journal of Applied Physics;2023-03-27

2. Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering;Japanese Journal of Applied Physics;2015-03-09