Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DP14/pdf
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1. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation;Materials Science in Semiconductor Processing;2024-02
2. Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy;Journal of Materials Chemistry C;2024
3. 4H-SiC Auger recombination coefficient under the high injection condition;Japanese Journal of Applied Physics;2023-01-10
4. Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation;Materials Science in Semiconductor Processing;2023-01
5. Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces;Journal of Applied Physics;2020-05-21
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