Abstract
Transistor performances of lateral and vertical 3C-SiC MOSFETs are investigated in the temperature range of 25 °C to 300 °C. Both types of MOSFETs operate up to 300 °C and the lateral MOSFETs possess peak channel mobility of more than 100 cm2/(Vs) even at 300 °C for the [110]- and [-110]-channel directions. In both MOSFETs, on-currents decrease monotonically and threshold voltages shift negatively as the temperature increases. The temperature dependence of on-currents in the lateral MOSFETs is weaker than that in the vertical MOSFETs. The leakage current at the negative gate voltage increases at above 200 °C. The activation energies calculated from the leakage currents at 200 °C and 300 °C are about half of the 3C-SiC bandgap energy of 2.3 eV.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. K. Shibahara, T. Saito, S. Nishino, H. Matsunami, IEEE Electron Device Lett., EDL-7, (1986), 692.
2. G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas'ev, H. Yano, T. Kimoto, H. Matsunami; Mater. Res. Soc. Symp. Proc. 640 (2001), p. H(3), 2.
3. H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, N. Hatta; phys. stat. Sol. (b) 245, no. 7, (2008), 1272.
4. M. Abe, H. Nagasawa, P. Ericsson, H. Strömberg, M. Bakowski, A. Schöner; Microelectron. Eng. 83, (2006), 24.
5. M. Bakowski, A. Schöner, P. Ericsson, H. Strömberg, H. Nagasawa, M. Abe; J. Telecommun. Information Tech., No. 2, (2007), 49.
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献