Effects of Hydroxyl Group in AlO x Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors-Reference-Cited by-同舟云学术

Effects of Hydroxyl Group in AlO x Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors

Published:2019-01-18 Issue:6 Volume:216 Page:1800737
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Park Kyoung Woo¹²^ORCID,Jeon Gukjin¹,Lee Seunghee¹,Ko Jong Beom¹²,Park Sang‐Hee K.¹

Affiliation:

1. Department of Materials Science and EngineeringKAIST291 Daehak‐roYuseong‐guDaejeon34141Republic of Korea

2. Module Development TeamSamsung Display1 Samsung‐roYongin‐siGyeonggi‐do17113Republic of Korea

Funder

Samsung Display Corporation through KAIST Samsung Display Research Center Program

Wearable Platform Materials Technology Center

Korean Government

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800737

Reference25 articles.

1. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

2. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

3. Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

4. Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

5. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

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