Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light-Reference-Cited by-同舟云学术

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Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

Published:2016-01-02 Issue:1 Volume:17 Page:1-7
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Park Sang Cheol,Kim Dongwook,Shin Hyunji,Lee Do Kyoung,Zhang Xue,Park Jaehoon,Choi Jong Sun

Funder

Korea Evaluation Institute of Industrial Technology

Ministry of Education and Science Technology (MEST)

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/15980316.2016.1149114

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs

3. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

4. Effect of aluminum doping on a solution-processed zinc-tin-oxide thin-film transistor

5. The effects of zinc nitrate, zinc acetate and zinc chloride precursors on investigation of structural and optical properties of ZnO thin films

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1. Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment;Journal of Physics D: Applied Physics;2023-07-12

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4. Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs;Materials;2022-05-10

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