High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering

Author:

Yeom Hye-In1ORCID,Kim Jingyu1ORCID,Jeon Guk-Jin1ORCID,Park Jeongwoo2,Han Dong Uk1,Kim Joohyeong1,Kim Kyung Min1ORCID,Shong Bonggeun2ORCID,Park Sang-Hee Ko1ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea

2. Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea

Abstract

With in-depth analysis and the exact conduction mechanism, the oxide thin-film diodes were developed by ALD-assisted interface engineering.

Funder

Ministry of SMEs and Startups

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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